# US 2026/0076178 A1 · Semiconductor device including electric fuse and resistor elements and manufacturing method thereof

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- Number: US 2026/0076178 A1
- Document ID: US20260076178A1
- Status: Published application
- Kind: A1
- Application number: 19/392,403
- Filed: 2025-11-18
- Published: 2026-03-12
- Earliest claimed: 2021-09-02
- Assignees: Renesas Electronics Corporation
- Applicants: Renesas Electronics Corporation
- Inventors: Naohito SUZUMURA; Hiromichi TAKAOKA; Kenichiro SONODA; Hideaki TSUCHIYA; Yasutaka NAKASHIBA
- Web page: https://patentgrep.com/patent/US20260076178A1

## CPC

- H10W 20/493: {Fuses, i.e. interconnections changeable from conductive to non-conductive}
- H01C 7/006: {Thin film resistors}
- H10D 1/474: {comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides}
- H10D 86/85: characterised by only passive components
- H10W 20/498: {Resistive arrangements or effects of, or between, wiring layers}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H01C: RESISTORS
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

An electric fuse element has a first portion, a second portion arranged on one end of the first portion, and a third portion arranged on the other end of the first portion. A resistor element is arranged separately from the electric fuse element. A material of each of the electric fuse element and the resistor element has silicon metal or nickel chromium. The electric fuse element and the resistor element are arranged in an upper layer of the first wiring and in lower layer of the second wiring. A wiring width of the second portion and a wiring width of the third portion are larger than a wiring width of the first portion.

## Claims

### Claim 1

A semiconductor device, comprising:
a specific circuit portion;
a spare redundant circuit portion having the same function as the specific circuit portion; and
an electric fuse element that can be a target of fusing removal when replacing the specific circuit portion with the redundant circuit portion,
wherein a material of the electric fuse element includes a silicon metal or nickel chromium.

### Claim 2

A method of manufacturing a semiconductor device, comprising:
forming a first wiring;
forming a first metal film having a first portion, a second portion arranged on one end of the first portion and a third portion arranged on the other end of the first portion in an upper layer of the first wiring;
forming a second metal film separately from the first metal film in an upper layer of the first wiring; and
forming a second wiring in an upper layer of the first metal film and the second metal film,
wherein a material of each of the first metal film and the second metal film includes silicon metal or nickel chromium,
wherein the first metal film is formed such that each of at least one part of the second portion and at least one part of the third portion has a wiring width larger than a wiring width of the first portion, and
wherein the first metal film and the second metal film are formed at the same time.