# US 2026/0076170 A1 · Semiconductor structure

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- Number: US 2026/0076170 A1
- Document ID: US20260076170A1
- Status: Published application
- Kind: A1
- Application number: 19/392,144
- Filed: 2025-11-18
- Published: 2026-03-12
- Earliest claimed: 2023-02-21
- Assignees: Nanya Technology Corporation
- Applicants: Nanya Technology Corporation
- Inventors: Li Han LIN
- Web page: https://patentgrep.com/patent/US20260076170A1

## CPC

- H10W 20/43: Layouts of interconnections
- H10P 14/6319: {Formation by plasma treatments, e.g. plasma oxidation of the substrate}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10P 50/283: {by chemical means}
- H10P 50/73: {using masks for insulating materials}
- H10W 20/063: {by forming conductive members before forming protective insulating material}
- H10W 20/096: {by contacting with gases, liquids or plasmas}
- H10W 20/075: {of multilayered thin functional dielectric layers}
- H10W 20/077: {on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence)}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method of forming a semiconductor structure includes forming a conductive structure in a first dielectric layer. A second dielectric layer is formed over the first dielectric layer. A conductive contact is formed in the second dielectric layer. The second dielectric layer is etched to form a recess on a top surface of the conductive structure. A native oxide layer is formed on a top surface and a sidewall of the second dielectric layer, the top surface of the conductive structure, and a sidewall of the conductive contact. A first plasma process is performed to form a first material layer over the native oxide layer by using a first plasma gas. A second plasma process is performed to form a second material layer over the first material layer by a second plasma gas different from the first plasma gas. A spacer layer is formed on the second material layer.

## Claims

### Claim 1

A semiconductor structure, comprising:
a substrate;
a first dielectric layer over the substrate;
a conductive structure in the first dielectric layer;
a second dielectric layer over the first dielectric layer;
a conductive contact in the second dielectric layer, wherein a recess is between the conductive contact and the second dielectric layer;
a native oxide layer over a top surface and a sidewall of the second dielectric layer, a top surface of the conductive structure, and a sidewall of the conductive contact;
a first material layer over the native oxide layer and in the recess;
a second material layer over the first material layer and in the recess, wherein the second material layer comprises a material different from a material of the first material layer; and
a spacer filled in the recess.

### Claim 2 (depends on 1)

The semiconductor structure of claim 1, wherein the spacer is separated from the first material layer by the second material layer.

### Claim 3 (depends on 1)

The semiconductor structure of claim 1, wherein the second material layer is in contact with the first material layer.

### Claim 4 (depends on 1)

The semiconductor structure of claim 1, wherein the spacer is in contact with the second material layer.

### Claim 5 (depends on 1)

The semiconductor structure of claim 1, wherein the first material layer is a nitride layer and the second material layer is an oxide layer.

### Claim 6 (depends on 1)

The semiconductor structure of claim 1, wherein the material of the second material layer is different from a material of the spacer.

### Claim 7 (depends on 1)

The semiconductor structure of claim 1, wherein the native oxide layer has a first portion in contact with the conductive contact and a second portion in contact with the second dielectric layer, and wherein the first portion of the native oxide layer includes a material different from a material of the second portion of the native oxide layer.

### Claim 8 (depends on 7)

The semiconductor structure of claim 7, wherein the first material layer has a first portion in contact with the first portion of the native oxide layer and a second portion in contact with the second portion of the native oxide layer, and wherein the first portion of the first material layer includes a material different from a material of the second portion of the first material layer.

### Claim 9 (depends on 8)

The semiconductor structure of claim 8, wherein the second material layer has a first portion in contact with the first portion of the first material layer and a second portion in contact with the second portion of the first material layer, and wherein the first portion of the second material layer includes a material different from that of the second portion of the second material layer.

### Claim 10 (depends on 1)

The semiconductor structure of claim 1, wherein a top surface of the spacer is substantially coplanar with a top surface of the second material layer.