# US 2026/0076166 A1 · Cell structure with intermediate metal layers for power supplies

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- Number: US 2026/0076166 A1
- Document ID: US20260076166A1
- Status: Published application
- Kind: A1
- Application number: 19/081,972
- Filed: 2025-03-17
- Published: 2026-03-12
- Earliest claimed: 2020-09-15
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Li-Chun Tien; Chih-Liang Chen; Hui-Zhong Zhuang; Shun Li Chen; Ting Yu Chen
- Web page: https://patentgrep.com/patent/US20260076166A1

## CPC

- H10W 20/0698: {Local interconnections}
- H10W 20/427: {Power or ground buses}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/0186: {Manufacturing their interconnections or electrodes, e.g. source or drain electrodes}
- H10D 84/0193: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/834: {comprising FinFETs}
- H10D 84/853: {comprising FinFETs}
- H10W 20/42: Vias, e.g. via plugs
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A cell on an integrated circuit is provided. The cell includes: a fin structure; an intermediate fin structure connection metal track disposed in an intermediate fin structure connection metal layer above the fin structure, the intermediate fin structure connection metal track being connected to the fin structure; and a first intermediate gate connection metal track disposed in an intermediate gate connection metal layer above the intermediate fin structure connection metal layer, the first intermediate gate connection metal track being connected to the intermediate fin structure connection metal track. A first power supply terminal is connected to the first intermediate gate connection metal track.

## Claims

### Claim 1

A cell on an integrated circuit, comprising:
a fin structure;
an intermediate fin structure connection metal track disposed in an intermediate fin structure connection metal layer above the fin structure, the intermediate fin structure connection metal track being connected to the fin structure; and
a first intermediate gate connection metal track disposed in an intermediate gate connection metal layer above the intermediate fin structure connection metal layer, the first intermediate gate connection metal track being connected to the intermediate fin structure connection metal track, wherein a first power supply terminal is connected to the first intermediate gate connection metal track, wherein the first intermediate gate connection metal track extends in a first direction, and wherein the first intermediate gate connection metal track is over a boundary line between the cell and a neighboring cell of the cell in a second direction perpendicular to the first direction.

### Claim 2 (depends on 1)

The cell of claim 1, further comprising:
a plurality of metal tracks disposed in a first metal (M1) layer above the intermediate gate connection metal layer, wherein no power supply terminal is connected to the plurality of metal tracks.

### Claim 3 (depends on 2)

The cell of claim 2, wherein the plurality of metal tracks are parallel to each other and extend in the first direction.

### Claim 4 (depends on 3)

The cell of claim 3, wherein the cell has a cell height in a second direction perpendicular to the first direction, the plurality of metal tracks includes five metal tracks configured to fit into the cell height while complying with a predetermined minimum metal pitch (MMP).

### Claim 5 (depends on 1)

The method of claim 1, wherein the first intermediate gate connection metal track extends outside the cell and is connected to a power connecting cell, the power connecting cell being a first neighboring cell of the cell in the first direction.

### Claim 6 (depends on 1)

The cell of claim 1, wherein the first power supply terminal is connected to the first intermediate gate connection metal track through the power connecting cell.

### Claim 7 (depends on 6)

The cell of claim 6, wherein the power connecting cell has a width of one contacted poly pitch (CPP).

### Claim 8 (depends on 1)

The cell of claim 1, wherein the first intermediate gate connection metal track is connected to the power connecting cell through a vertical interconnect access (VIA).

### Claim 9 (depends on 1)

The cell of claim 1, further comprising:
a second intermediate gate connection metal track disposed in the intermediate gate connection metal layer, wherein a second power supply terminal is connected to the second intermediate gate connection metal track.

### Claim 10 (depends on 9)

The cell of claim 9, wherein the second intermediate gate connection metal track extends in the first direction, the first intermediate gate connection metal track is located at a top of the cell in a second direction perpendicular to the first direction, and the second intermediate gate connection metal track is located at a bottom of the cell in the second direction.

### Claim 11

A cell assembly on an integrated circuit, comprising:
a power connecting cell providing a first power supply terminal;
a cell, the power connecting cell being a first neighboring cell of the cell in a first direction, wherein the cell further comprises:
a fin structure; and
an intermediate fin structure connection metal track disposed in an intermediate fin structure connection metal layer above the fin structure, the intermediate fin structure connection metal track being connected to the fin structure; and
a first intermediate gate connection metal track extending in the first direction and disposed in an intermediate gate connection metal layer above the intermediate fin structure connection metal layer, wherein the first intermediate gate connection metal track is connected to the intermediate fin structure connection metal track in the cell and connected to the first power supply terminal in the power connecting cell, and wherein the first intermediate gate connection metal track extends outside the cell and is connected to the power connecting cell.

### Claim 12 (depends on 11)

The cell assembly of claim 11, wherein the cell further comprises:
a plurality of metal tracks disposed in a first metal (M1) layer above the intermediate gate connection metal layer, wherein no power supply terminal is connected to the plurality of metal tracks.

### Claim 13 (depends on 12)

The cell assembly of claim 12, wherein the plurality of metal tracks are parallel to each other and extend in the first direction.

### Claim 14 (depends on 13)

The cell assembly of claim 13, wherein the cell and the power connecting cell both have a cell height in a second direction perpendicular to the first direction, the plurality of metal tracks include five metal tracks configured to fit into the cell height while complying with a predetermined minimum metal pitch (MMP).

### Claim 15 (depends on 11)

The cell assembly of claim 11, wherein the first intermediate gate connection metal track is connected to the first power supply terminal through a vertical interconnect access (VIA).

### Claim 16 (depends on 11)

The cell of claim 11, further comprising:
a second intermediate gate connection metal track disposed in the intermediate gate connection metal layer, wherein a second power supply terminal is connected to the second intermediate gate connection metal track.

### Claim 17

A method of fabricating a semiconductor structure on an integrated circuit, comprising:
forming a fin structure over a substrate;
forming an intermediate fin structure connection metal track in an intermediate fin structure connection metal layer above the fin structure, the intermediate fin structure connection metal track being connected to the fin structure; and
forming a first intermediate gate connection metal track in an intermediate gate connection metal layer above the intermediate fin structure connection metal layer, the first intermediate gate connection metal track being connected to the intermediate fin structure connection metal track, wherein the intermediate gate connection metal track is connected to a first power supply terminal, wherein the first intermediate gate connection metal track extends in a first direction, and wherein the first intermediate gate connection metal track is over a boundary line between the cell and a second neighboring cell of the cell in a second direction perpendicular to the first direction.

### Claim 18 (depends on 17)

The method of claim 17, wherein the fin structure extend in the first direction, and wherein the intermediate fin structure connection metal track extends in the second direction perpendicular to the first direction.

### Claim 19 (depends on 18)

The method of claim 18, wherein the intermediate fin structure connection metal layer and the intermediate gate connection metal layer are below a first metal (M1) layer.

### Claim 20 (depends on 18)

The method of claim 18, wherein the first power supply terminal is connected to the first intermediate gate connection metal track through the power connecting cell.