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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Hung CHU, Po-Chin CHANG, Tzu-Pei CHEN, Yuting CHENG, Kan-Ju LIN, Chih-Shiun CHOU, Hung-Yi HUANG, Pinyen LIN, Sung-Li WANG, Sheng-Tsung WANG, Lin-Yu HUANG, Shao-An WANG, Harry CHIEN
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A method for manufacturing a semiconductor device includes forming a conductive feature in a first dielectric layer; forming a second dielectric layer on the first dielectric layer; forming a trench that penetrates through the second dielectric layer, and terminates at the conductive feature; forming a contact layer in the trench and on the conductive feature; etching back the contact layer to form a first via contact feature in the trench, the first via contact feature being electrically connected to the conductive feature; and forming a second via contact feature on the first via contact feature in the trench.
A semiconductor device, comprising:
A semiconductor device, comprising:
A semiconductor device, comprising:
Dependencies are inferred from the claim text.