Method of manufacturing semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAn-Ren ZI, Ching-Yu CHANG, Chin-Hsiang LIN
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Abstract
A method of manufacturing a semiconductor device includes forming a first protective layer over an edge portion of a first main surface of a semiconductor substrate. A metal-containing photoresist layer is formed over the first main surface of the semiconductor substrate. The first protective layer is removed, and the metal-containing photoresist layer is selectively exposed to actinic radiation. A second protective layer is formed over the edge portion of the first main surface of the semiconductor substrate. The selectively exposed photoresist layer is developed to form a patterned photoresist layer, and the second protective layer is removed.
Claims20
A method of manufacturing a semiconductor device, comprising:
- providing a substrate having a photoresist layer formed on a first main surface of the substrate, wherein an edge portion of the first main surface of the substrate is free of the photoresist layer;
- exposing the photoresist layer to a pattern of actinic radiation;
- forming a protective coating on the edge portion of the first main surface of the substrate;
- baking the protective coating and the exposed photoresist layer;
- and
- developing the exposed photoresist layer with the protective coating on the edge portion of the first main surface of the substrate.
A method of manufacturing a semiconductor device, comprising:
- disposing a blocking structure over a circuit region of a substrate;
- applying a protective coating on an edge portion of the substrate with the blocking structure preventing the protective coating from being applied to the circuit region;
- applying a photoresist layer on the circuit region of the substrate;
- baking the photoresist layer;
- removing the protective coating from the substrate;
- exposing the photoresist layer to a pattern of actinic radiation;
- and
- developing the exposed photoresist layer.
A method, comprising:
- forming a first protective layer over an edge portion of a first main surface of a semiconductor substrate;
- forming a metal-containing layer over the first main surface of the semiconductor substrate;
- first heating of the first protective layer and the metal-containing layer;
- and
- removing the first protective layer and the metal-containing layer from over the edge portion of the semiconductor substrate.
Dependencies are inferred from the claim text.