# US 2026/0076150 A1 · Laser processing device and laser processing method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2026/0076150 A1 - Document ID: US20260076150A1 - Status: Published application - Kind: A1 - Application number: 19/255,046 - Filed: 2025-06-30 - Published: 2026-03-12 - Earliest claimed: 2024-07-01 - Assignees: Ibiden Co., Ltd. - Applicants: Ibiden Co., Ltd. - Inventors: Kohei SUZUKI; Takumi INAGAKI; Osamu INAGAWA - Web page: https://patentgrep.com/patent/US20260076150A1 ## CPC - H10P 74/238: {comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement} - B23K 26/032: {using optical means} - B23K 26/04: Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light - B23K 26/0626: {Energy control of the laser beam (B23K26/0622 takes precedence)} - B23K 26/0648: {comprising lenses} - B23K 26/402: involving non-metallic material, e.g. isolators - H10P 72/0436: {mainly by radiation} - H10P 72/0604: {Process monitoring, e.g. flow or thickness monitoring} - H10W 70/05: of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04) - H10W 70/685: comprising multiple insulating layers - B23K 2103/42: {Plastics other than composite materials} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A laser processing device for forming an opening in an insulating layer of a wiring substrate includes a light source that emits a laser beam, an objective lens that focuses the laser beam onto a surface of a wiring substrate, a control device including circuitry that controls an irradiation condition of the laser beam, and a sensor that outputs to the control device a sensor output based on plasma light emitted from the wiring substrate due to irradiation of the laser beam. The circuitry of the control device recognizes a change in an irradiation site of the laser beam based on the sensor output, reduces processing capability of the laser beam and continues the irradiation upon. ## Claims ### Claim 1 A laser processing device for forming an opening in an insulating layer of a wiring substrate, comprising: a light source that emits a laser beam; an objective lens configured to focus the laser beam onto a surface of a wiring substrate; a control device comprising circuitry configured to control an irradiation condition of the laser beam; and a sensor that outputs to the control device a sensor output based on plasma light emitted from the wiring substrate due to irradiation of the laser beam, wherein the circuitry of the control device is configured to recognize a change in an irradiation site of the laser beam based on the sensor output, reduce processing capability of the laser beam and continue the irradiation upon. ### Claim 2 (depends on 1) The laser processing device according to claim 1, wherein the circuitry of the control device is configured to recognize the change in the irradiation site based on a change in a level of the sensor output corresponding to a change in an intensity of the plasma light. ### Claim 3 (depends on 1) The laser processing device according to claim 1, wherein the circuitry of the control device is configured to calculate an integrated value from a start of processing at one processing position for the sensor output corresponding to each of irradiations of the laser beam to the one processing position on the wiring substrate, and to recognize a change in the irradiation site when the integrated value satisfies a predetermined condition. ### Claim 4 (depends on 1) The laser processing device according to claim 1, wherein the circuitry of the control device is configured to lower the processing capability by reducing an energy density of the laser beam. ### Claim 5 (depends on 1) The laser processing device according to claim 1, further comprising: a beam splitter positioned in an optical path between the light source and the objective lens; and a filter positioned between the beam splitter and the sensor and having a stop band including a wavelength of the laser beam, wherein the beam splitter transmits the laser beam and reflects the plasma light emitted from the wiring substrate such that the plasma light is deflected from the optical path of the laser beam. ### Claim 6 (depends on 2) The laser processing device according to claim 2, wherein the circuitry of the control device is configured to calculate an integrated value from a start of processing at one processing position for the sensor output corresponding to each of irradiations of the laser beam to the one processing position on the wiring substrate, and to recognize a change in the irradiation site when the integrated value satisfies a predetermined condition. ### Claim 7 (depends on 2) The laser processing device according to claim 2, wherein the circuitry of the control device is configured to lower the processing capability by reducing an energy density of the laser beam. ### Claim 8 (depends on 2) The laser processing device according to claim 2, further comprising: a beam splitter positioned in an optical path between the light source and the objective lens; and a filter positioned between the beam splitter and the sensor and having a stop band including a wavelength of the laser beam, wherein the beam splitter transmits the laser beam and reflects the plasma light emitted from the wiring substrate such that the plasma light is deflected from the optical path of the laser beam. ### Claim 9 (depends on 3) The laser processing device according to claim 3, wherein the circuitry of the control device is configured to lower the processing capability by reducing an energy density of the laser beam. ### Claim 10 (depends on 3) The laser processing device according to claim 3, further comprising: a beam splitter positioned in an optical path between the light source and the objective lens; and a filter positioned between the beam splitter and the sensor and having a stop band including a wavelength of the laser beam, wherein the beam splitter transmits the laser beam and reflects the plasma light emitted from the wiring substrate such that the plasma light is deflected from the optical path of the laser beam. ### Claim 11 (depends on 4) The laser processing device according to claim 4, further comprising: a beam splitter positioned in an optical path between the light source and the objective lens; and a filter positioned between the beam splitter and the sensor and having a stop band including a wavelength of the laser beam, wherein the beam splitter transmits the laser beam and reflects the plasma light emitted from the wiring substrate such that the plasma light is deflected from the optical path of the laser beam. ### Claim 12 (depends on 6) The laser processing device according to claim 6, wherein the circuitry of the control device is configured to lower the processing capability by reducing an energy density of the laser beam. ### Claim 13 (depends on 6) The laser processing device according to claim 6, further comprising: a beam splitter positioned in an optical path between the light source and the objective lens; and a filter positioned between the beam splitter and the sensor and having a stop band including a wavelength of the laser beam, wherein the beam splitter transmits the laser beam and reflects the plasma light emitted from the wiring substrate such that the plasma light is deflected from the optical path of the laser beam. ### Claim 14 (depends on 12) The laser processing device according to claim 12, further comprising: a beam splitter positioned in an optical path between the light source and the objective lens; and a filter positioned between the beam splitter and the sensor and having a stop band including a wavelength of the laser beam, wherein the beam splitter transmits the laser beam and reflects the plasma light emitted from the wiring substrate such that the plasma light is deflected from the optical path of the laser beam. ### Claim 15 A laser processing method for a wiring substrate, comprising: irradiating an insulating layer of a wiring substrate with a laser beam such that an opening is formed in the insulating layer and exposes a portion of a conductor layer covered by the insulating layer; and causing a sensor to output a sensor output based on plasma light emitted from the wiring substrate irradiated with the laser beam, wherein the irradiating includes recognizing a change in an irradiation site of the laser beam based on the sensor output, and reducing processing capability of the laser beam based on the sensor output while continuing irradiation of the laser beam. ### Claim 16 (depends on 15) The laser processing method according to claim 15, wherein the reducing of the processing capability includes reducing an energy density of the laser beam. ### Claim 17 (depends on 15) The laser processing method according to claim 15, wherein the change in the irradiation site is recognized based on a change in a level of the sensor output corresponding to a change in an intensity of the plasma light. ### Claim 18 (depends on 15) The laser processing method according to claim 15, further comprising: repeating irradiation of the laser beam a plurality of times at one processing position on the wiring substrate; and calculating an integrated value from a start of processing at one processing position for the sensor output corresponding to the irradiation of each of the times, wherein the change in the irradiation site is recognized when the integrated value satisfies a predetermined condition. ### Claim 19 (depends on 16) The laser processing method according to claim 16, wherein the change in the irradiation site is recognized based on a change in a level of the sensor output corresponding to a change in an intensity of the plasma light. ### Claim 20 (depends on 16) The laser processing method according to claim 16, further comprising: repeating irradiation of the laser beam a plurality of times at one processing position on the wiring substrate; and calculating an integrated value from start of processing at one processing position for the sensor output corresponding to the irradiation of each of the times, wherein the change in the irradiation site is recognized when the integrated value satisfies a predetermined condition.