Semiconductor-type quantum bit device

Abstract

The present invention has an object to provide a semiconductor-type quantum bit device in which, at the time of integration of a plurality of devices, characteristic variations of a quantum bit operation are suppressed. Provided is a semiconductor-type quantum bit device (10), comprising at least: a support substrate (1) formed of a first conductivity type semiconductor layer; a fringe electric field forming layer (2) formed on the support substrate (1), the fringe electric field forming layer (2) being formed of any one of a second conductivity type semiconductor layer and a metal layer, the second conductivity type semiconductor layer having a conductivity type different from a conductivity type of the first conductivity type semiconductor layer, the metal layer forming a Schottky barrier with the support substrate; a buried oxide layer (3) formed on the fringe electric field forming layer (2); and a quantum dot semiconductor layer (4) which is formed on the buried oxide layer (3) and in which quantum dots are formed.

Dependencies are inferred from the claim text.