Preferentially oriented electrode film and preparation methods thereof

A method of preparing a preferentially oriented electrode film, characterised in that it comprises:

• a substrate, and the said substrate is pre-treated and mounted on a sample holder in a magnetron sputtering apparatus;
• under a magnetron sputtering apparatus, a first target is connected, and a primary seed layer is grown under nitrogen and inert gas;
• wherein the primary seed layer formed is an AxB1-xN or A3-xB1-xN film, wherein A=Cu, Fe;
• B═Pd, Pt;
• and 0<x<1;
• finishing the sputtering of the primary seed layer, a second target is connected and the secondary seed layer is grown under nitrogen/oxygen and inert gas;
• wherein the secondary seed layer formed is a combination of one or more of the following films:
• chromium nitride film, titanium nitride film, tantalum nitride film, magnesium oxide film;
• the sputtering of the secondary seed layer is finished and a third target is connected to grow a bottom electrode layer having a preferential orientation in the (00/) crystallographic direction, wherein the bottom electrode layer formed is a combination of one or more of the following films:
• a platinum film, a titanium nitride film, a gold film, a strontium ruthenate film, or a niobium doped strontium titanate film.