Semiconductor device and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Ting Chien, Su-Hao Liu, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo
Life of this patent
Estimating the term…
Abstract
In accordance with some embodiments, a source/drain contact is formed by exposing a source/drain region through a first dielectric layer and a second dielectric layer. The second dielectric layer is recessed under the first dielectric layer, and a silicide region is formed on the source/drain region, wherein the silicide region has an expanded width.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a source/drain region;
- forming a dielectric material over the source/drain region, the dielectric material comprising an implantation region, the implantation region comprising a first dopant at a first concentration, the source/drain region comprising a second implantation region, the second implantation region comprising the first dopant, wherein the second implantation region has a second concentration of the first dopant less than the first concentration;
- forming a silicide region overlying the source/drain region, the silicide region having a first width;
- and
- forming a contact through the dielectric material to have an interface with the silicide region, the interface having a second width less than the first width.
A method of manufacturing a semiconductor device, the method comprising:
- depositing a dielectric material over a source/drain region;
- forming an opening through the dielectric material to expose the source/drain region;
- implanting a first dopant into the dielectric material and the source/drain region, a first concentration of the first dopant in the dielectric material being greater than a second concentration of the first dopant in the source/drain region;
- forming a silicide region over the source/drain region;
- and
- forming a contact adjacent to the first dopant within the dielectric material, the contact having a smaller width than the silicide region.
A method of manufacturing a semiconductor device, the method comprising:
- depositing a hard mask over a source/drain region;
- depositing a dielectric material over the hard mask;
- etching an opening through the dielectric material and the hard mask to expose the source/drain region;
- implanting a first dopant into the dielectric material and the source/drain region, wherein a first concentration of the first dopant within the dielectric material is different from a second concentration of the first dopant within the source/drain region;
- recessing the hard mask such that the opening through the hard mask is wider than the opening through the dielectric material;
- forming a silicide to extend from a first portion of the hard mask to a second portion of the hard mask;
- and
- filling a remainder of the opening with a conductive material.
Dependencies are inferred from the claim text.