Vertical cavity surface emitting laser and method for producing same

A method for producing a vertical-cavity surface-emitting laser, the vertical-cavity surface-emitting laser comprising a first semiconductor substrate, a first reflector, a second reflector and an active region with a quantum well structure for generating light, wherein the active region is arranged in series between the first reflector and the second reflector, the method comprising:

• a) providing the first semiconductor substrate, on which the first reflector is produced;
• b) providing a second semiconductor substrate, on which the second reflector is produced;
• c) providing a third semiconductor substrate, and epitaxial growing the active region with the quantum well structure on the third semiconductor substrate;
• d) connecting the first reflector to the active region;
• e) removing the third semiconductor substrate;
• f) connecting the second reflector to the active region;
• g) removing the second semiconductor substrate;
• and
• prior to step f), producing an orientation mark on a surface of an outer face of the first semiconductor substrate facing away from the first reflector, wherein the orientation mark is configured so as to define a position of the vertical-cavity surface-emitting laser in a plane in parallel with the outer face of the first semiconductor substrate.