Back to results
US 2026/0074482 A1Published application
Wafer-level etched facet for perpendicular coupling of light from a semiconductor laser device
AssigneeSkorpios Technologies, Inc.
InventorsMurtaza Askari, Stephen B. Krasulick, Majid Sodagar, John Zyskind
Life of this patent
Estimating the term…
Abstract
A semiconductor laser device is provided. The semiconductor laser device includes: a substrate having a first facet; a guiding layer having a second facet through which an output light is configured to be emitted; a bottom dielectric layer between the substrate and the guiding layer, and a top dielectric layer on the guiding layer. The second facet is at an angle relative to the first facet.
Claims1
A semiconductor laser device, comprising:
- a substrate having a first facet;
- a guiding layer having a second facet through which an output light is configured to be emitted;
- a bottom dielectric layer between the substrate and the guiding layer;
- and
- a top dielectric layer on the guiding layer;
- and
- wherein the second facet is at an angle relative to the first facet, and wherein the angle is between 2° and 30°.
4 more elements
Dependencies are inferred from the claim text.