Method of inspecting a risk of printing defect pattern in photolithography process
AssigneePowerchip Semiconductor Manufacturing Corporation
InventorsChih-Wei Chiu, Pei-Shan Shih
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AssigneePowerchip Semiconductor Manufacturing Corporation
InventorsChih-Wei Chiu, Pei-Shan Shih
Estimating the term…
A method of inspecting a risk of printing defective pattern in photolithography process, including generating an intensity curve of a photomask pattern in aerial image simulation, wherein the intensity curve is provided with a primary trough and a secondary troughs adjacent to the primary trough, the aerial image simulation is provided with a threshold intensity intersecting one of the secondary troughs to define an intensity region, partitioning the intensity region into multiple rectangular fragments, summing up areas of the rectangular fragments to obtain a total area, and determining the photomask pattern having no risk of forming defective pattern if the total area is smaller than a spec value and determining the photomask pattern having risk of forming defective pattern if the total area is larger than the spec value.
A method of inspecting a risk of printing defective pattern in photolithography process, comprising:
A method of inspecting a risk of printing defective pattern in photolithography process, comprising:
A computer program product with computer-executable instructions that are executed by a computer to perform a method of inspecting a risk of printing defective pattern in photolithography process, said method comprises:
A computer program product with computer-executable instructions that are executed by a computer to perform a method of inspecting a risk of printing defective pattern in photolithography process, said method comprises:
Dependencies are inferred from the claim text.