Threshold voltage adjustable field effect transistor biosensor using tri-layer electrodes
AssigneeInternational Business Machines Corporation
InventorsTakashi Ando, Sufi Zafar
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Abstract
A microelectronic structure for bio-sensing includes a field-effect-transistor having a channel layer. A first layer of SiO2 is arranged on the channel layer, and a second layer of HfO2 is arranged on top of the first layer. A tri-layer metal electrode is arranged on the top of the second layer, the tri-layer metal electrode includes a bottom layer, an alloy layer on top of the bottom layer, and a top layer. A third layer constructed of an oxide material is arranged on top of the tri-layer metal electrode. A thickness of the bottom layer or the alloy layer of the tri-layer metal electrode is based on a pH of a test solution.
Claims20
A microelectronic structure comprising:
- a field-effect-transistor (FET) including a channel layer;
- a first layer comprising SiO2 on the channel layer;
- a second layer comprising HfO2 on top of the first layer;
- a tri-layer metal electrode on top of the second layer, the tri-layer metal electrode comprising a bottom layer, an alloy layer on top of the bottom layer of the tri-layer metal electrode, and a top layer;
- and
- a third layer comprising an oxide material on top of the tri-layer metal electrode,
- wherein a thickness of the bottom layer of the tri-layer metal electrode is based on a pH of a test solution.
A microelectronic structure comprising:
- a field-effect-transistor (FET) including a channel layer;
- a first layer comprising SiO2 on the channel layer;
- a second layer comprising HfO2 on top of the first layer;
- a tri-layer metal electrode on top of the second layer, the tri-layer metal electrode comprising a bottom layer, an alloy layer on top of the bottom layer, and a top layer;
- and
- a third layer comprising an oxide material on top of the tri-layer metal electrode,
- wherein a thickness of the alloy layer of the tri-layer metal electrode is based on a pH of a test solution.
A method of manufacturing a microelectronic structure for bio-sensing, the method comprising:
- providing a field-effect-transistor (FET) including a channel layer;
- arranging a first layer constructed of SiO2 on the channel layer;
- arranging a second layer constructed of HfO2 on top of the first layer;
- arranging a tri-layer metal electrode on top of the second layer, the tri-layer metal electrode includes a bottom layer, an alloy layer on top of the bottom layer, and a top layer;
- and
- arranging a third layer comprising an oxide material on top of the tri-layer metal electrode;
- wherein a thickness of the alloy layer or the bottom layer of the tri-layer metal electrode is based on a pH of a test solution.
Dependencies are inferred from the claim text.