Method for producing halotrisilane and method for manufacturing semiconductor devices using the same

A halotrisilane preparation method comprising:

• providing a reactant that contains halotrisilane comprising M halogen atoms, where M is a natural number from 2 to 8;
• cooling the reactant to a first temperature that is higher than a freezing point of the reactant and lower than room temperature, the cooling the reactant providing a cooled reactant;
• forming a mixture by adding a mixed reducing agent to the cooled reactant, the mixed reducing agent including an aluminum-based first reducing agent and a tin-based second reducing agent;
• agitating the mixture at a second temperature, the second temperature being higher than the first temperature;
• and
• separating, from the mixture, a product including halotrisilane comprising N halogen atoms, where N is a natural number from 1 to 7 and where N<M.

A method of manufacturing a semiconductor device, the method comprising:

• providing a substrate;
• providing a silicon precursor on the substrate;
• and
• forming a silicon-containing layer using the silicon precursor on the substrate, wherein
• the silicon precursor comprises halotrisilane with at least one halogen atom,
• the providing the silicon precursor comprises providing octahalotrisilane and reducing the octahalotrisilane using a mixed reducing agent, and
• the mixed reducing agent comprises an aluminum-based first reducing agent and a tin-based second reducing agent.