Semiconductor device and method of manufacturing same

An integrated circuit (IC) structure comprising:

• a semiconductor substrate;
• a sensing electrode positioned on the semiconductor substrate, wherein the sensing electrode includes a sidewall forming a wall of an isolation trench adjacent the sensing electrode;
• a dielectric layer patterned on the sensing electrode and sidewall thereof having a thickness greater than two times a surface roughness of the sensing electrode;
• and
• a membrane positioned above the sensing electrode forming a cavity therein.

A semiconductor device, comprising:

• an integrated circuit substrate having a plurality of conductive components associated therewith;
• at least one bottom dielectric layer formed on the integrated circuit substrate;
• a plurality of sensing vias through the at least one bottom dielectric layer, the plurality of sensing vias interconnecting with at least one of the plurality of conductive components;
• at least one sensing electrode patterned on the at least one bottom dielectric layer, wherein the at least one sensing electrode is in electrical communication with at least one of the plurality of sensing vias and the at least one sensing electrode has sidewalls forming walls of an isolation trench adjacent to the sensing electrode and sidewalls thereof;
• at least one top dielectric layer formed subsequent to patterning of the at least one sensing electrode, the at least one top dielectric layer covering a top and the sidewalls of the at least one sensing electrode and the top dielectric layer patterned on each sensing electrode and sidewall thereof having a thickness greater than two times a surface roughness of the sensing electrode;
• at least one cavity on the integrated circuit substrate, wherein the at least one sensing electrode is disposed therein;
• and
• a carrier wafer bonded to the integrated substrate.