Dynamic biasing for improved radio frequency (rf) switch performance

A method of constructing a radio frequency integrated circuit (RFIC) having a switch field effect transistor (FET), the method comprising:

• tying a gate region to a body region of the switch FET through a gate resistor coupled to the gate region and a body resistor coupled to the body region of the switch FET;
• and
• forming a dynamic bias control circuit between the gate resistor and the body resistor coupled to the switch FET, in which the dynamic bias control circuit comprises:
• at least one transistor coupled to the body region of the switch FET through the body resistor and coupled to the gate region of the switch FET through the gate resistor, in which the at least one transistor comprises an RF silicon on insulator (SOI) device, and
• a capacitor coupled between the gate region and the body region of the switch FET and in parallel each transistor in the dynamic bias control circuit.