Thin film photovoltaic device with long product life

Abstract

A thin film photovoltaic device is configured for receiving and converting a target wavelength range of light to electricity: The photovoltaic device includes a substrate, a bottom electrode disposed over the substrate, a lower carrier transport layer disposed over the bottom electrode, a perovskite absorber layer disposed over the lower carrier transport layer, an upper carrier transport layer disposed over the perovskite absorber layer, and a top electrode disposed over the upper carrier transport layer. The perovskite absorber layer has a physical thickness of 900 nm or less and is characterized by a bandgap energy (BE). At least one of the top and bottom 2024/039846 electrodes includes a transparent conducting layer which is transparent to the target wavelength range of light. The perovskite absorber layer has an optical path length that is greater than or equal to 8 times the physical thickness of the perovskite absorber layer for incident radiation that is i) within the target wavelength range, and ii) within an incident energy range of BE to (BE+0.52 eV).

Dependencies are inferred from the claim text.