Solar cell, method for manufacturing solar cell, and electric device

A manufacturing method of a solar cell, comprising:

• providing a substrate, wherein the substrate is provided with a first surface and a second surface arranged opposite to the first surface, the first surface comprising first regions and second regions, the first regions and the second regions being alternately arranged;
• sequentially forming a tunnel oxide layer and a doped polysilicon layer on the first surface;
• patterning the doped polysilicon layer and the tunnel oxide layer to expose the second regions in the first surface;
• sequentially forming an intrinsic amorphous silicon layer and a doped amorphous silicon layer on the second surface, wherein a conductivity type of the doped polysilicon layer is different from a conductivity type of the doped amorphous silicon layer;
• and
• forming a first passivation layer on the first surface, wherein the first passivation layer comprises a first passivation sub-layer covering the doped polysilicon layer in the first regions, and a second passivation sub-layer covering the second regions.

An electric device, comprising a solar cell,

• wherein the solar cell comprises:
• a substrate, wherein the substrate is provided with a first surface and a second surface arranged opposite to the first surface, the first surface comprising first regions and second regions, the first regions and the second regions being alternately arranged;
• a tunnel oxide layer and a doped polysilicon layer which are arranged on the first regions in the first surface, wherein the tunnel oxide layer is arranged between the first surface and the doped polysilicon layer;
• a first passivation layer, wherein the first passivation layer comprises a first passivation sub-layer covering the doped polysilicon layer in the first regions, and a second passivation sub-layer covering the second regions;
• and
• an intrinsic amorphous silicon layer and a doped amorphous silicon layer which are arranged on the second surface, wherein the intrinsic amorphous silicon layer is arranged between the second surface and the doped amorphous silicon layer, wherein a conductivity type of the doped polysilicon layer is different from a conductivity type of the doped amorphous silicon layer.