Methods and assemblies for depositing a molybdenum chalcogenide
AssigneeASM IP Holding B.V.
InventorsAbhishek Dubey, Harsh Vardhan Bana
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Abstract
The disclosure relates to methods of depositing a molybdenum dichalcogenide on a surface of a semiconductor substrate from a gas phase. The methods utilize an oxygen and halogen comprising molybdenum precursor and, in some embodiments, the deposition methods may be selective. The methods may be cyclic deposition methods, in particular atomic layer deposition methods. The disclosure further relates to a molybdenum dichalcogenide layer deposited according to the methods herein, as well as to semiconductor processing assemblies arranged to execute said methods.
Claims20
A method of depositing a molybdenum dichalcogenide on a semiconductor substrate, the method comprising
- providing the substrate having a first surface in a reaction chamber;
- contacting the first surface with a gas-phase molybdenum precursor;
- and
- contacting the first surface with a gas-phase chalcogen precursor,
- wherein the molybdenum precursor is a molybdenum oxyhalide.
A semiconductor processing assembly comprising:
- a first reaction chamber constructed and arranged to hold a substrate having a first surface;
- an injector system constructed and arranged to provide a molybdenum precursor and a chalcogen precursor into the first reaction chamber in a gas phase to contact the first surface;
- wherein the semiconductor processing assembly further comprises
- a molybdenum precursor source constructed and arranged to contain and vaporize a molybdenum precursor;
- and
- a chalcogen precursor source constructed and arranged to contain and vaporize a chalcogen precursor, and
- wherein the semiconductor processing assembly is constructed and arranged to provide the molybdenum precursor and the chalcogen precursor via the injector system into the first reaction chamber to deposit molybdenum dichalcogenide on the first surface.
Dependencies are inferred from the claim text.