Display device and semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorMizuki SATO
Life of this patent
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Abstract
An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.
Claims1
A semiconductor device comprising:
- a wiring provided between adjacent electrodes;
- and
- a thin film transistor,
- wherein a channel formation region of the thin film transistor is provided under the wiring,
- wherein the channel formation region is provided at a position overlapping with the wiring, and
- wherein a channel width direction of the channel formation region is parallel to a direction in which current flows through the wiring.
Dependencies are inferred from the claim text.