Capacitor structure, switch structure, and capacitor array and electronic device including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsWonjun JUNG, Sinyoung Kim, Hyungi Seok
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AssigneeSamsung Electronics Co., Ltd.
InventorsWonjun JUNG, Sinyoung Kim, Hyungi Seok
Estimating the term…
A capacitor structure includes a semiconductor substrate, a first well, a second well, a first electrode, a second electrode, a first choke impedance element and a second choke impedance element. The semiconductor substrate includes an outer well having a first conductivity type. The first well is disposed in the outer well and has a second conductivity type. The second well is disposed in the first well and has the first conductivity type. At least portions of the first and second electrodes contact the second well. The first choke impedance element is connected between the second well and a ground voltage. The second choke impedance element is connected between the first well and a power supply voltage.
A capacitor structure comprising:
-20. (canceled)
A capacitor array comprising:
(canceled)
An electronic device comprising:
Dependencies are inferred from the claim text.