Bulk acoustic wave filter
AssigneeSTMicroelectronics International N.V.
InventorPatrick POVEDA
Life of this patent
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Abstract
The present disclosure relates to a method for manufacturing a bulk acoustic wave filter. An example of this method includes transferring a first structure onto a second structure. The first structure includes, on a top face of a first substrate, a piezoelectric material layer overlaid by a first electrode. The second structure includes, on a top face of a second substrate, an insulating layer. The insulating layer includes a cavity formed from the top face of the insulating layer. In transferring the first structure, via its top face, onto the top face of the second structure, the first electrode is aligned with the cavity within the insulating layer.
Claims13
A method for manufacturing a bulk acoustic wave filter comprising:
- transferring a first structure onto a second structure, the first structure including, on a top face of a first substrate, a piezoelectric material layer overlaid by a first electrode, the second structure including, on a top face of a second substrate, an insulating layer, the insulating layer including a cavity formed from the top face of the insulating layer, and
- wherein transferring the first structure comprises transferring the first structure, via its top face, onto the top face of the second structure, the first electrode being aligned with the cavity within the insulating layer.
A bulk acoustic wave filter including:
- a substrate;
- an insulating layer, formed on a top face of the substrate, and including a cavity, the whole top face of which flush with the top face of the insulating layer;
- a piezoelectric material layer on the insulating layer;
- a first electrode formed on a bottom face of the piezoelectric material layer within the cavity, the piezoelectric material layer being not open in line with the cavity.
Dependencies are inferred from the claim text.