Resist composition, laminate, and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsSatoshi KUSAMA, Kousuke OHYAMA, Shun KIKUCHI, Ryo NISHIKAWA, Masaki OHASHI
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AssigneeShin-Etsu Chemical Co., Ltd.
InventorsSatoshi KUSAMA, Kousuke OHYAMA, Shun KIKUCHI, Ryo NISHIKAWA, Masaki OHASHI
Estimating the term…
A resist composition including a hypervalent iodine compound represented by formula (1), a carboxy group-containing compound, and a solvent. In formula (1), “n” represents an integer of 0 to 4 when “m” is 0, an integer of 0 to 6 when “m” is 1, and an integer of 0 to 8 when “m” is 2; R1, R2, and R3 represent a halogen atom or a hydrocarbyl group having 1 to 10 carbon atoms; R4 represents a halogen atom or a hydrocarbyl group having 1 to 40 carbon atoms; R5 represents a carbonyl group or a hydrocarbylene group having 1 to 10 carbon atom; and I and R5 are bonded to adjacent carbon atoms of aromatic ring. This can provide: a resist composition that exhibits excellent sensitivity and resolution in photolithography using a high-energy beam, particularly in electron beam (EB) lithography and EUV lithography; and a patterning process using resist composition.
A resist composition comprising a hypervalent iodine compound represented by the following formula (1), a carboxy group-containing compound, and a solvent,
Dependencies are inferred from the claim text.