Detection method of mos transistor
AssigneeUnited Microelectronics Corp.
InventorsZhi Sheng Chen, Ying-Ting Kuo
Life of this patent
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Abstract
A detection method of a metal-oxide-semiconductor (MOS) transistor is provided. The detection method includes the following steps. A MOS transistor is provided, wherein a source and a drain of the MOS transistor are each connected to a contact. The contacts are removed to form contact holes exposing the source and the drain. The source and the drain are removed through the contact holes to form recesses. The contact holes and the recesses are filled with a protective material. The cross-sectional profiles of the recesses are obtained. It is determined whether the MOS transistor is failed according to the cross-sectional profiles of the recesses.
Claims16
A detection method of a metal-oxide-semiconductor (MOS) transistor, comprising:
- providing a MOS transistor, wherein a source and a drain of the MOS transistor are each connected to a contact;
- removing the contacts to form contact holes exposing the source and the drain;
- removing the source and the drain through the contact holes to form recesses;
- filling the contact holes and the recesses with a protective material;
- obtaining cross-sectional profiles of the recesses;
- and
- determining whether the MOS transistor is failed according to the cross-sectional profiles of the recesses.
Dependencies are inferred from the claim text.