Gas sensor and method of manufacturing the same
AssigneeElectronics and Telecommunications Research Institute
InventorsSeung Eon MOON, Jeong Hun KIM
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Abstract
A gas sensor and a method of manufacturing the same are disclosed. A gas sensor according to an embodiment of the present invention includes a multi-layered thin film in which a plurality of micro holes are formed and which includes a plurality of detection electrodes and a plurality of heating electrodes, a substrate which is formed under the multi-layered thin film and of which a portion of a central region is etched to form a micro chamber, and a plurality of valve structures formed on the multi-layered thin film and in which a volume of each of the plurality of valve structures changes according to a temperature.
Claims14
A gas sensor comprising:
- a multi-layered thin film in which a plurality of micro holes are formed and which includes a plurality of detection electrodes and a plurality of heating electrodes;
- a substrate which is formed under the multi-layered thin film and of which a portion of a central region is etched to form a micro chamber;
- and
- a plurality of valve structures formed on the multi-layered thin film and in which a volume of each of the plurality of valve structures changes according to a temperature.
A method of manufacturing a gas sensor, comprising:
- forming a multi-layered thin film, which includes a plurality of detection electrodes and a plurality of heating electrodes and in which a plurality of micro holes are formed, on a substrate;
- forming a micro chamber in the substrate;
- and
- forming a plurality of valve structures, in which a volume of each of the plurality of valve structures changes according to a temperature, on the multi-layered thin film.
Dependencies are inferred from the claim text.