Method of treating thin films and method of manufacturing memory device

A method of treating thin films, the method comprising:

• forming first and second stressor layers on a thin film formed on a substrate, alternately and repeatedly;
• annealing the substrate;
• supplying an etch initiator to the inside of the chamber where the substrate is placed;
• purging the inside of the chamber;
• supplying a third reaction material to the inside of the chamber to activate the etch initiator;
• and
• purging the inside of the chamber,
• wherein forming the first stressor layer comprising:
• supplying a first capping precursor to the inside of a chamber to adsorb the first capping precursor onto the thin film;
• purging the inside of the chamber;
• supplying a first reaction material to the inside of the chamber to form a first stressor layer;
• purging the inside of the chamber,
• wherein forming the second stressor layer comprising:
• supplying a second capping precursor to the inside of a chamber to adsorb the second capping precursor onto the thin film;
• purging the inside of the chamber;
• supplying a second reaction material to the inside of the chamber to form a second stressor layer;
• purging the inside of the chamber.