Composition, method of treating metal-containing film by using the composition, and method of preparing semiconductor device by using the composition

A composition comprising

• hydrofluoric acid;
• and
• an etching controller, wherein
• the composition does not substantially include hydrogen peroxide,
• the etching controller comprises at least one compound represented by Formula 1,
• wherein, in Formula 1,
• L1 is a single bond, *—O—*, *—S—*′, or a C1-C10 alkylene group,
• R1 is *—OH, *—C(═O)—OH, *—P(═O)(OH)2, or *—N(L11-R11)(L12-R12),
• L11 and L12 are each independently a single bond or a C1-C10 alkylene group,
• R11 and R12 are each independently hydrogen, *—OH, *—C(═O)—OH, *—P(═O)(OH)2, or *—NH2,
• in L1, L11 and L12, at least one hydrogen in the C1-C10 alkylene group is optionally substituted with a C1-C10 alkyl group, *—OH, *—C(═O)—OH, *—P(═O)(OH)2, or *—NH2,
• * and *′ each indicate a binding site to a neighboring atom, and
• a number of groups represented by *—P(═O)(OH)2 in Formula 1 is 1, 2, or 3.