Semiconductor Device and Connecting Method

Abstract

The purpose of this invention is to provide a semiconductor device that prevents defects in semiconductor elements caused by differences in thermal expansion and maintains low electrical resistance by directly or indirectly laminating an Fe—Ni alloy metal layer onto the front-surface or back-surface electrodes of the semiconductor element. In this invention, an Fe—Ni alloy metal layer is directly or indirectly applied on the surface electrodes of the semiconductor element, and the semiconductor element is connected to a conductor through the Fe—Ni alloy metal layer. Depending on the application, the Ni content of the Fe—Ni alloy metal layer is set within the range of 36% to 45% by weight, and the thickness of the Fe—Ni alloy metal layer is set within the range of 2 μm to 20 μm.

Dependencies are inferred from the claim text.