Ion implantation method and solid source material used for ion generation

Abstract

An ion implantation method includes heating a solid source material containing a first metal element at a predetermined operating temperature to generate a vapor containing the first metal element, generating a plasma containing ions of the first metal element using the vapor, and implanting the ions of the first metal element obtained from the plasma into a workpiece, in which the solid source material contains a first material that contains the first metal element and has a melting point, a sublimation point, or a decomposition point lower than the operating temperature, and a second material that contains an oxide, a nitride, a carbide, or a metal and has a melting point, a sublimation point, or a decomposition point higher than the operating temperature.

Dependencies are inferred from the claim text.