Read broadcast operations associated with a memory device
AssigneeMicron Technology, Inc.
InventorsDmitri A. Yudanov, Shanky Kumar Jain
Life of this patent
Estimating the term…
Abstract
Methods, systems, and devices related to write broadcast operations associated with a memory device are described. In one example, a memory device in accordance with the described techniques may include a memory array, a sense amplifier array, and a signal development cache configured to store signals (e.g., cache signals, signal states) associated with logic states (e.g., memory states) that may be stored at the memory array (e.g., according to various read or write operations). The memory device may enable read broadcast operations. A read broadcast may occur from the memory array to multiple locations of the signal development cache, for example via one or more multiplexers.
Claims21
(canceled)
A memory device, comprising:
- a memory array comprising a plurality of memory cells;
- a signal development component array comprising a plurality of storage elements different than the plurality of memory cells;
- a sense amplifier array;
- and
- one or more selection components operable to:
- selectively couple the memory array with the signal development component array;
- selectively couple the signal development component array with the sense amplifier array;
- and
- selectively couple the memory array with the sense amplifier array based at least in part on bypassing the signal development component array.
A method at a memory device, comprising:
- performing a first coupling, using one or more selection components of the memory device, of a memory array of the memory device with a signal development component array of the memory device, the memory array comprising a plurality of memory cells, and the signal development component array comprising a plurality of storage elements different than the plurality of memory cells;
- performing a second coupling, using the one or more selection components of the memory device, of the signal development component array with a sense amplifier array of the memory device;
- and
- performing a third coupling, using the one or more selection components of the memory device, of the memory array with the sense amplifier array based at least in part on bypassing the signal development component array.
Dependencies are inferred from the claim text.