Back to results
US 2026/0056463 A1Published application
Hypervalent bismuth compound, resist composition and pattern forming process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsKousuke Ohyama, Masaki Ohashi, Shun Kikuchi, Satoshi Kusama
Life of this patent
Estimating the term…
Abstract
A resist composition comprising a hypervalent bismuth compound having formula (1) and a solvent is provided. When processed by photolithography using high-energy radiation, the resist composition exhibits a high sensitivity and resolution. The non-chemically-amplified resist composition exhibits a high sensitivity and resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography.
Claims6
A hypervalent bismuth compound having the formula (1):
- wherein R1 and R2 are each independently halogen or a C1-C10 hydrocarbyl group which may contain a heteroatom, R1 and R2 may bond together to form a ring with the carbon atoms to which they are attached and the intervenient atoms,
- A1, A2 and A3 are each independently a C2-C20 hydrocarbyl group which contains a polymerizable functional group and may contain a heteroatom,
- Ar1, Ar2 and Ar3 are each independently a C6-C20 arylene group in which some or all of the hydrogen atoms on an aromatic ring may be substituted by halogen or a C1-C20 hydrocarbyl group which may contain a heteroatom.
Dependencies are inferred from the claim text.