US 2026/0056462 A1 · POSITIVE-TONE ORGANOMETALLIC EUV RESISTS

Abstract

Embodiments disclosed herein are directed to positive-tone photoresist compositions. Traditional chemically amplified resists have intrinsic limitations for use in high resolution Extreme UltraViolet (EUV) lithography due to low EUV absorptivity. Positive-tone photoresists efficiently absorb EUV light are needed to meet demands of high resolution, high sensitivity, and low line-edge-roughness. Organometallic complexes are promising candidates providing high EUV absorptivity. Positive-tone resists are used for most lithography steps in high-volume manufacturing making metal-containing positive-tone resists enormously valuable. Thus, embodiments herein disclose new positive-tone photoresist lithography compositions, and methods for forming resist patterns using one or more lithography compositions.

Claims15

Dependent claims

A positive-tone lithographic composition comprising the following formula,

wherein:
M is tellurium (Te), antimony (Sb), tin (Sn), Iodine (I) or bismuth (Bi);
R, when present, is independently an aromatic or aliphatic hydrocarbon;
L, when present, is independently a ligand comprising a heteroatom bound to M;
B, when present, is a molecular fragment that is bound to two or more M atoms;
Q is a molecular fragment comprising a heteroatom bound to M and a carbon, sulfur or phosphorus bound to a R′ group;
R′ is an alkyl or aromatic fragment containing either an alkene or an alkyne;
and, wherein a=0-12;
b=0-12;
c=1-12;
d=0-12;
and e=1-8.

9 more elements

Dependencies are inferred from the claim text.

Positive-tone organometallic euv resists

Life of this patent

Positive-tone organometallic euv resists

Life of this patent

Abstract

Claims15