Method and apparatus for characterizing thin films
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYen-Liang Chen, Lee-Feng Chen
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYen-Liang Chen, Lee-Feng Chen
Estimating the term…
A method includes generating a source beam of heterodyne light toward a test layer so that the source beam is incident on the test layer at a first incidence angle. The source beam is polarized, thereby forming a reference beam. A portion of the source beam that is reflected by the test layer is polarized, thereby forming a test beam. An intensity signal of the reference beam and an intensity signal of the test beam are measured. A difference between a phase of the intensity signal of the test beam and a phase of the intensity signal of the reference beam is determined. A refractive index, an extinction coefficient, and a thickness of the test layer are determined based on the difference between the phase of the intensity signal of the test beam and the phase of the intensity signal of the reference beam.
A method comprising:
A method comprising:
An apparatus comprising:
Dependencies are inferred from the claim text.