Composition for treating semiconductor device and method for manufacturing modified substrate
AssigneeFUJIFILM Corporation
InventorsAkihiro Hakamata, Tomonori Takahashi
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AssigneeFUJIFILM Corporation
InventorsAkihiro Hakamata, Tomonori Takahashi
Estimating the term…
The present invention provides a composition for treating a semiconductor device, which can preferentially form a coating film on a first surface in a case of being brought into contact with a substrate having a first surface containing a metal atom and a second surface not containing a metal atom, and can selectively form a coating film on the first surface even after storage; and a method for manufacturing a modified substrate using the composition for treating a semiconductor device. The composition for treating a semiconductor device of the present invention contains a polymer having a functional group which interacts with a surface containing a metal atom in a substrate and an ethylenically unsaturated group, a polymerization inhibitor, and a solvent.
A composition for treating a semiconductor device, comprising:
Dependencies are inferred from the claim text.