US 2026/0053028 A1 · SEMICONDUCTOR DEVICE

Abstract

A semiconductor device includes first and second conductive layers, a first epitaxial structure and a first via structure. The first conductive layer extends along a first direction, and provides a first reference voltage signal. The second conductive layer extends along the first direction, and is separated from the first conductive layer along a second direction. The first epitaxial structure is disposed between the first conductive layer and the second conductive layer, and has a first width along the first direction. The first via structure is disposed between the first conductive layer and the second conductive layer, and transmits the first reference voltage signal from the first conductive layer through the second conductive layer to the first epitaxial structure. The first via structure has a second width along the first direction. The second width is approximately equal to or larger than twice of the first width.

Claims20

Dependent claims

A semiconductor device, comprising:

a first conductive layer extending along a first direction, and configured to provide a first reference voltage signal;
a second conductive layer extending along the first direction, and separated from the first conductive layer along a second direction different from the first direction;
a first epitaxial structure disposed between the first conductive layer and the second conductive layer, and having a first width along the first direction;
and
a first via structure disposed between the first conductive layer and the second conductive layer, and configured to transmit the first reference voltage signal from the first conductive layer through the second conductive layer to the first epitaxial structure,
wherein the first via structure has a second width along the first direction, and
the second width is approximately equal to or larger than twice of the first width.

4 more elements

A semiconductor device, comprising:

a first conductive segment configured to provide a first reference voltage signal, and comprising a first portion, a second portion and a third portion arranged in order along a first direction, each of the first portion and the third portion having a first width along a second direction different from the first direction, the second portion having a second width different from the first width along the second direction;
a first via structure disposed between the first portion and the third portion;
a second conductive segment extending along the first direction, and disposed above the first conductive segment;
and
a first epitaxial structure disposed between the first conductive segment and the second conductive segment, and configured to receive the first reference voltage signal through the first via structure and the second conductive segment in order.

2 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims20