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US 2026/0052804 A1Published application
High efficiency microdevice
AssigneeVueReal Inc.
InventorsGholamreza CHAJI, Ehsanollah FATHI, Hossein Zamani SIBONI
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Abstract
A vertical solid state device comprising: a connection pad; and side walls comprising a metal-insulator-semiconductor (MIS) structure; wherein a gate of the MIS structure is shorted to at least one contact of the vertical solid state device and a threshold voltage (VT) of the MIS structure is adjusted to increase the efficiency of the device.
Claims4
A method comprising
- providing a vertical solid state device comprising a connection pad and side walls comprising a metal-insulator-semiconductor (MIS) structure;
- shorting a gate of the MIS structure to at least a n-contact of the vertical solid state device;
- and
- adjusting a threshold voltage (VT) of the MIS structure to increase the efficiency of the device.
1 more element
Dependencies are inferred from the claim text.