Reverse conducting igbt with electron barrier layer
AssigneeLittelfuse, Inc.
InventorPeter Waind
Life of this patent
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Abstract
An apparatus and an associated method for a reverse-conducting insulated gate bipolar transistors and associated structures. The apparatus includes a substrate disposed between a frontside and a backside, a diode pilot region disposed in the substrate, an insulated gate bipolar transistor (IGBT) region disposed in the substrate, and a diode region with a barrier layer disposed adjacent to each of and between the diode pilot region and the IGBT region. The barrier layer is configured to prevent flow of electrons at a first predetermined current and allow flow of electrons at a second predetermined current.
Claims22
A semiconductor apparatus, comprising:
- a substrate disposed between a frontside and a backside;
- a diode pilot region disposed in the substrate;
- an insulated gate bipolar transistor (IGBT) region disposed in the substrate;
- and
- a diode region with a barrier layer disposed adjacent to each of and between the diode pilot region and the IGBT region, wherein the barrier layer is configured to prevent flow of electrons at a first predetermined current and allow flow of electrons at a second predetermined current.
A method for manufacturing a semiconductor device, comprising:
- providing a substrate and forming at least one frontside structure and at least one backside structure on the substrate;
- forming a diode pilot region in the substrate;
- forming an insulated gate bipolar transistor (IGBT) region in the substrate;
- forming a diode region with a barrier layer adjacent to each of and between the diode pilot region and the IGBT region, wherein the barrier layer is configured to prevent flow of electrons at a first predetermined current and allow flow of electrons at a second predetermined current;
- forming a collector layer and a diode cathode layer in the substrate, the forming including
- forming a first portion of the collector layer formed adjacent the IGBT region,
- forming a first portion of the diode cathode layer adjacent the diode pilot region, and
- forming a second portion of the collector layer and a second portion of the diode cathode layer under the diode region with the barrier layer, wherein the second portion of the collector layer is formed adjacent the second portion of the diode cathode layer;
- and
- forming a buffer layer above the diode cathode layer and the collector layer and adjacent the diode pilot region, the barrier layer and the IGBT region.
Dependencies are inferred from the claim text.