Semiconductor structure and method for forming same

Abstract

A semiconductor structure and a method for forming same. The semiconductor structure comprises: a substrate, which comprises a first region; two or more capacitor structures, which are connected in parallel and are sequentially stacked on the first region in the direction perpendicular to the substrate, wherein a top edge region of at least one capacitor structure is provided with a protective layer, the protective layer being used for covering the top edge region of the capacitor structure, and thereby reducing the current which flows from a metal layer, which is located above the protective layer, to the edge region of the capacitor structure. By using the scheme, the capacity of a capacitor structure in a semiconductor structure can be increased without increasing the area of a device, and the reliability of the capacitor structure can be improved.

Dependencies are inferred from the claim text.