US 2026/0051888 A1 · CAPACITIVE ELEMENT AND CIRCUIT STRUCTURE INCLUDING CAPACITIVE ELEMENT(S)

Abstract

Disclosed are a capacitive element (CE) and a circuit structure including CE(s). The CE includes series-connected first, second, and third transistors (dual-gate n-type field effect transistors). Shared source/drain regions between the second and first transistors and between the first and third transistors are connected to capacitors, respectively. The first transistor is larger than the second and third transistors. The front gate of the first transistor and back gates of all three transistors receive a first control voltage (VC1). The front gates of the second and third transistors receive a second control voltage (VC2). VC1 and VC2 are concurrently switchable to concurrently switch the three transistors between on and off states. High and low voltage levels of VC1 are at a first positive voltage level and at ground. High and low voltage levels of VC2 are at the first positive voltage level and at a second positive voltage level.

Claims20

Dependent claims

A structure comprising:

three transistors including:
a first transistor with a first front gate and a first back gate;
a second transistor with a second front gate and a second back gate;
and
a third transistor with a third front gate and a third back gate,
wherein the first transistor is connected in series between the second transistor and the third transistor,
wherein the first front gate, the first back gate, the second back gate, and the third back gate are connected to receive a first control voltage, and
wherein the second front gate and the third front gate are connected to receive a second control voltage;
a first capacitor connected to a first shared source/drain region between the first transistor and the second transistor;
and
a second capacitor connected to a second shared source/drain region between the first transistor and the third transistor.

8 more elements

A structure comprising:

a first voltage line;
a second voltage line;
and
a capacitive element, wherein the capacitive element includes:
three transistors including:
a first transistor with a first front gate and a first back gate;
a second transistor with a second front gate and a second back gate;
and
a third transistor with a third front gate and a third back gate,
wherein the first transistor is connected in series between the second transistor and the third transistor with the second transistor being connected between a ground rail and the first transistor and the third transistor being connected between the first transistor and the ground rail,
wherein the first front gate, the first back gate, the second back gate and the third back gate are connected to receive a first control voltage, and
wherein the second front gate and the third front gate are connected to receive a second control voltage;
a first capacitor connected between the first voltage line and a first shared source/drain region between the first transistor and the second transistor;
and
a second capacitor connected between the second voltage line and a second shared source/drain region between the first transistor and the third transistor.

12 more elements

Dependencies are inferred from the claim text.

Capacitive element and circuit structure including capacitive element(s)

Life of this patent

Capacitive element and circuit structure including capacitive element(s)

Life of this patent

Abstract

Claims20