Improved Light Source Integration

A method of manufacturing a SOI device suitable for receiving a light source device in a flip-chip arrangement, comprising the steps of:

• providing a SOI wafer portion comprising, from bottom to top:
• a support layer
• a BOX, buried oxide, layer comprising BOX material;
• a BOX-covering layer, comprising a selective etch stop material, said selective etch stop material preferably being silicon layer material;
• forming one or more structures in said BOX-covering layer, said structures relating to silicon structures and/or silicon nitride structures, said forming comprising each of:
• selectively etching said BOX-covering layer, providing a cladding oxide layer over said BOX-covering layer, and providing a light interface within said cladding oxide layer;
• forming plurality of recesses extending between the support layer and the BOX-covering layer said recesses defining a pocket for said receiving of the light source device and a plurality of pedestals wherein at least one of the pedestals is provided at a side of the pocket that is opposite with respect to another one of the pedestals
• wherein a height of the pedestals is defined by a selective etch, whereby said selective etch stop material of the BOX-covering layer material of the silicon layer, is comprised in a top portion of each pedestal and acts as etch stop.