High bandwidth memory and method for manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsBUM-SOO KIM, HYUNSU HWANG, JUMYONG PARK, DONGJOON OH, SANGHOO CHO
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Abstract
In an embodiment of the present inventive concept, a high bandwidth memory includes a base die, and a semiconductor stack disposed on the base die, the semiconductor stack comprising a plurality of underfill members and a plurality of memory dies that are alternately stacked. Each of the plurality of underfill members includes first sides, each of the plurality of memory dies includes second sides, and each of the first sides is recessed from a corresponding second side.
Claims20
A high bandwidth memory comprising:
- a base die;
- and
- a semiconductor stack disposed on the base die, the semiconductor stack comprising a plurality of underfill members and a plurality of memory dies that are alternately stacked,
- wherein each of the plurality of underfill members includes first sides,
- wherein each of the plurality of memory dies includes second sides, and
- wherein each of the first sides is recessed from a corresponding second side.
A high bandwidth memory comprising:
- a buffer die;
- a semiconductor stack disposed on the buffer die;
- and
- a molding material covering the semiconductor stack disposed on the buffer die,
- wherein the semiconductor stack comprises,
- a plurality of core dies stacked in vertical direction;
- and
- a plurality of interconnection structures, each interconnection structure being disposed between the buffer die and a core die adjacent to the buffer die, or between neighboring core dies,
- wherein each of the plurality of interconnection structures comprises:
- a plurality of connection members;
- and
- an underfill member disposed around the plurality of connection members,
- wherein the underfill member between neighboring core dies comprises first sides,
- wherein each of the plurality of core dies comprises second sides, and
- wherein each of the first sides of the underfill member is recessed from a corresponding second side.
A method of manufacturing a high bandwidth memory comprising:
- stacking a plurality of underfill members and a plurality of memory dies alternately on a base die;
- performing plasma etching such that each of first sides of the plurality of underfill members is recessed from a corresponding second side of the plurality of memory dies;
- and
- molding the plurality of underfill members and the plurality of memory dies with a molding material on the base die.
Dependencies are inferred from the claim text.