Device of removing low frequency noise

A low-noise transistor comprising:

• a phase complexing channel layer formed on a gate dielectric layer, in which quantum dots are formed as a single layer within an amorphous matrix;
• and
• a surface stabilization layer in contact with the phase complexing channel layer and having a superlattice structure of an inorganic insulating layer and an organic shielding layer,
• wherein the surface stabilization layer has a higher band gap than the phase complexing channel layer, the operation in the saturation region is performed even at Vgs having a value greater than Vds.

A low-noise transistor comprising a source electrode grounded at a small signal level;

• a drain electrode opposite the source electrode;
• and a gate electrode to which an input voltage of a small-signal level is applied, the low-noise transistor comprising:
• a gate dielectric layer formed on the gate electrode;
• a phase complexing channel layer formed on the gate dielectric layer;
• and
• a surface stabilization layer formed on the phase complexing channel layer,
• wherein the source electrode and the drain electrode are formed opposite to each other while directly contacting the phase complexing channel layer, and even if gate voltage increases, drain current flowing through the drain electrode to source electrode maintains a constant level by state hybridization of carriers.