High-Density Multi-Level Interconnects for Harsh Environments and Power Packaging and Method of Making The Same

Abstract

A high-density multi-level interconnect device for harsh environment applications combines thin-film and thick-film processing technologies to achieve superior performance in extreme conditions. The device comprises an alumina substrate with a thin-film metal layer deposited via electron beam evaporation, including a 20 nm titanium adhesion layer and a 400 nm gold layer, followed by a screen-printed thick-film gold layer. The layers are annealed at 850° C. for 10 minutes to promote strong adhesion. This hybrid approach provides improved die shear strength and enhanced thermal cycling resistance. The interconnects are suitable for wide bandgap semiconductor devices operating at temperatures up to 500° C. in harsh environments including elevated temperature, high pressure, and acidic conditions.

Dependencies are inferred from the claim text.