Systems And Methods For Measuring On-Die DI/DT Voltage Droops
AssigneeGoogle Inc.
InventorsBenjamin James Ogden Kerr, Erik Jens Loscalzo, Kok-Hong Chan
Life of this patent
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Abstract
The technology is directed to a di/dt circuit for detecting and measuring the di/dt droops on silicon. The circuit may be calibrated to account for silicon process spread. When a di/dt droop has been detected by the circuit, the magnitude of the droop can be measured by the circuit, allowing the system to determine the best course of action. For instance, when the measured droop is within predetermined limits, the system can continue to operate. However, in the event the measured droop is outside of the limits, the system can take different measures to reduce the clock frequency and therefore reduce the step change in power to prevent SDCs.
Claims19
A method for calibrating a circuit to account for silicon process spread, comprising:
- determining a voltage droop;
- determining, based on the voltage droop, a distance between edge vector values in a sampler chain;
- comparing the distance between edge vector values to an expected distance;
- and
- increasing a delay when the distance between edge vector values is less than the expected distance, or
- decreasing the delay when the distance between edge vector values is greater than the expected distance, or
- ending the calibration when the distance between edge vector values is equal to the expected distance.
Dependencies are inferred from the claim text.