Compound semiconductor amplifier and circuit module
AssigneeFujitsu Limited
InventorsNAOYA OKAMOTO, Shirou OZAKI, Yusuke KUMAZAKI, YASUHIRO NAKASHA, Naoki HARA
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AssigneeFujitsu Limited
InventorsNAOYA OKAMOTO, Shirou OZAKI, Yusuke KUMAZAKI, YASUHIRO NAKASHA, Naoki HARA
Estimating the term…
A compound semiconductor amplifier includes, on an upper side of a semi-insulating substrate, a compound semiconductor, and an amplifier, wherein the semi-insulating substrate has a substrate thickness for converting a wavelength at a first frequency into a second range of wavelength inside the semi-insulating substrate, and includes, on a lower surface, a metal layer having a sheet resistance value in a third range, the first frequency is a maximum frequency being used in the compound semiconductor amplifier, the second range of wavelength is 1/12 to ½ of the wavelength of the first frequency, and the third range is 3 to 1000 ohms.
A compound semiconductor amplifier comprising:
A circuit module that stacks a high-frequency circuit board on which a compound semiconductor amplifier is mounted at an interval of ½ to one wavelength at a first frequency with respect to a wavelength in air,
Dependencies are inferred from the claim text.