Composition for forming silicon-containing resist film and patterning process

Abstract

The present invention is a composition for forming a silicon-containing resist film contains a polysiloxane containing at least one of any of a repeating unit represented by formula (A-1), a repeating unit represented by formula (A-2), or a substructure represented by formula (A-3): wherein R1 is a monovalent organic group, a halogen atom, a hydroxy group, a sulfo group, a nitro group, or a carboxyl group, functioning as a group eliminated by heat, acid, or base, and R2 and R3 represent a monovalent organic group. The present invention can provide a composition for forming a silicon-containing resist film such that an ultra-fine resist pattern with excellent LWR (line width roughness) and CDU (critical dimension uniformity) can be formed.

Dependencies are inferred from the claim text.