Copper pillar co-planarity using digital lithography

Abstract

In one or more embodiments, a method includes conducting a first digital lithography process according to a mask pattern to form first vias having a first dimension over a first area and second vias having a second dimension over a second area of a first substrate, the first dimension and the second dimension are different. The method further includes receiving metrology data of first pillars and second pillars. The first pillars and the second pillars having different heights. A digital lithography device generates an updated mask pattern according to the metrology data. The method further includes conducting a second digital lithography process according to the updated mask pattern to form third vias having a third dimension over the first area and fourth vias having a fourth dimension over the second area of a second substrate, the third dimension and the fourth dimension are different.

Dependencies are inferred from the claim text.