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US 2026/0043697 A1Published application
Integrated circuit stress sensor
OwnerMichael Szelong, Tobias Fritzinventors
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Abstract
An apparatus is described which includes a semiconductor substrate and a shear stress sensor including first diffusion regions in the semiconductor substrate, in which the first diffusion regions are symmetrical over a first axis and a second axis. The first and second axes being orthogonal to each other. The apparatus further comprises normal stress sensors including a second diffusion region in the semiconductor substrate.
Claims26
An apparatus comprising:
- a semiconductor substrate;
- a shear stress sensor including first diffusion regions in the semiconductor substrate, in which the first diffusion regions are symmetrical over a first axis and a second axis, the first and second axes being orthogonal to each other;
- and
- normal stress sensors including a second diffusion region in the semiconductor substrate.
1 more element
An integrated circuit comprising:
- a semiconductor substrate having:
- first and second diffusion regions, the first diffusions region configured to conduct a current along a first direction along a surface of the semiconductor substrate, the second diffusion regions configured to conduct a current along a second direction along the surface, in which the first and second directions are angled from each other, and at least one of the first or second diffusion regions are symmetrical over a first axis and a second axis, the first axis and the second axis are orthogonal to each other;
- and
- a readout circuitry coupled to the first and second diffusion regions and configured to provide signals representing respective resistances of the first and second diffusion regions.
1 more element
Dependencies are inferred from the claim text.