Memory device including support structures and contact structures having different materials

A method comprising:

• forming levels of first dielectric materials interleaved with levels of second dielectric materials;
• forming memory cell strings including forming respective pillars of the memory cell strings through the levels of first dielectric materials and the levels of second dielectric materials;
• forming support structures including forming first pillars of the support structures through the levels of first dielectric materials and the levels of second dielectric materials, the first pillars including first dielectric liner portions and first core portions along respective lengths of the first pillars;
• forming contact structures including forming second pillars of the contact structures through the levels of first dielectric materials and the levels of second dielectric materials, forming the second pillars including second dielectric liner portions and core portions along respective lengths of the second pillars, wherein the first core portions and the second core portions have different materials;
• and
• replacing the levels of second dielectric materials with respective levels of conductive materials after forming the contact structures, wherein the levels of conductive materials form respective control gates for memory cells of the memory cell strings.

A method comprising:

• forming tiers located one over another, such that the tiers include respective memory cells and control gates for the memory cells;
• forming a first pillar extending through the tiers and separated from the control gates, including forming a first dielectric liner portion of the first pillar and a first core portion of the first pillar adjacent the first dielectric liner portion, such that the first dielectric liner portion and the first core portion extend along a length of the first pillar;
• and
• forming a second pillar extending through the tiers and separated from the control gates, including forming a second dielectric liner portion of the second tier and a second core portion of the second tier adjacent the second dielectric liner portion, such that the second dielectric portion and the second core portion extend along a length of the second pillar, and the first core portion and the second core portion have different materials.