Semiconductor package and method of fabricating the same

A semiconductor package comprising:

• a first redistribution layer comprising a first wiring;
• a first semiconductor chip disposed on an upper surface of the first redistribution layer;
• a post disposed on the upper surface of the first redistribution layer, and spaced apart from the first semiconductor chip in a direction parallel to the upper surface of the first redistribution layer, wherein the post is electrically connected to the first wiring;
• a second redistribution layer disposed on an upper surface of the post and comprising a second wiring and a base metallic layer, wherein the second wiring is electrically connected to the post, and the base metallic layer is disposed on the first semiconductor chip;
• and
• a heat emission part comprising a protrusion part configured to protrude toward the base metallic layer.

A semiconductor package fabricating method comprising:

• forming a marking metallic layer on a surface of a glass carrier;
• forming an upper redistribution layer on a first surface of the marking metallic layer, wherein the upper redistribution layer comprises upper wiring and a base metallic layer;
• forming a semiconductor chip layer on a surface of the upper redistribution layer, wherein the semiconductor chip layer comprises a post, a first semiconductor chip, and a molding member;
• forming a lower redistribution layer that comprises lower wiring electrically connected to the upper wiring, the first semiconductor chip, and the post and is disposed on a surface of the semiconductor chip layer;
• removing the glass carrier with turning the glass carrier upside down so that the glass carrier is positioned above;
• and
• forming a recess that extends from a second surface of the marking metallic layer toward the base metallic layer.